In order to deposit a material using a chemical
vapor deposition process, it must be possible to form a precursor -- a
chemical which can be converted into the desired solid material but which
is itself either a gas, or easily converted into a gas at a modest
temperature. What determines the vapor pressure of a material?
Equilibrium Vapor Pressure
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The concentration of a vapor which is in equilibrium with the
liquid -- the vapor pressure of the substance -- is determined, like
the equilibrium of any other simple reaction taking place at
constant total pressure, by the change in free enthalpy ("Gibbs
free energy") G = H - T*S, where H is the enthalpy (U + PV) and
S is the entropy. The concentration is denoted by brackets: [A] is
the concentration of substance A relative to the "standard
state", typically P = 1 atmospere, T = 25 C.
Thus the free energy change in going from the liquid to the
gaseous state determines the concentration of the gas -- i.e., the
vapor pressure. |
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Recall that entropy is essentially proportional to the logarithm
of the number of states accessible to a system. The change in S upon
evaporation is dominated by the increase in the number of states
accessible to molecules when they are in gaseous form instead of
within a liquid or solid, with a modest influence from the degree of
order in the solid or liquid. Since this term is multiplied by the
temperature, entropy becomes more important as the temperature
rises-- the commonplace observation that evaporation occurs more
readily when an object heats up.
The change in H is mostly determined by the strength of the
forces which hold the atoms or molecules in the liquid or solid
state. |
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Intermolecular Forces
Most CVD precursors evaporate in molecular form from a molecular liquid
or solid. The change in enthalpy upon evaporation is determined by the
forces which hold the molecules together. We'll review them, from the
weakest to the strongest.
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Van der Waals forces
These forces between neutral molecules arise from the tendency of
the electrons in nearby molecules to fluctuate in a correlated
fashion. The strength of the force varies as the inverse sixth (!)
power of the distance, so van der Waals forces are only important at
very short ranges.
The strength of van der Waals interactions is essentially
proportional to the number of electrons which interact. The van der
Waals force between atoms increases roughly as the square root of
the atomic number. The attraction between molecules increases about
linearly with the number of atoms in the molecule if the molecule is
linear or flat; "compact" molecules with less surface area
have correspondingly less van der Waals attraction. |
van der Waals bonding force in inert gases (J/mole):
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He-He |
76 |
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Ar-Ar |
1050 |
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Xe-Xe |
1990 |
bonding forces (estimated from boiling point) in some organic
compounds (J/mole):
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CH4 |
9300 |
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C5H12 [pentane] |
25,500 |
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Hydrogen bonding
Certain electronegative atoms (O, N, and F) when incorporated
into a molecule can still form fairly strong bonds with nearby
hydrogen atoms attached to another electronegative atom. Hydrogen
bonds are partially electrostatic in origin: the hydrogen attached
to e.g. O has a partial positive charge, the electronegative atom a
partial negative charge. Typical bond strength is about 20 KJ/mole/bond,
so they are on the order of 10-20 times stronger than the van der
Waals attraction per bond. |
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Covalent bonding
We have already discussed the strong bonds between atoms
("covalent bonds"), which occur due to the rearrangement
of the valence electrons to minimize overall energy. Covalent bonds
are generally much stronger than hydrogen bonds or van der Waals
forces. When a substance is held together by covalent bonds (e.g. a
silicon crystal) it will be very difficult to cause atoms to
evaporate from the surface. |
Some typical covalent bond energies in KJ/mole
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C-H |
320-400 |
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C=C |
600-700 |
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O-Br |
200 |
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Cl-N |
120 |
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Coordination complexes
We saw in our discussion of covalent bonding in simple first-row
elements that up to four bonds could be constructed out of the four
valence orbitals (s, px, py, pz). However, in CVD we are often
interested in deposition of "transition metals", elements
lower on the periodic table which have d or f electrons in the
valence shell, and can thus take higher coordination numbers (that
is, bond to more atoms) than allowed by s-p bonding. In order to
create volatile materials with such atoms, we must avoid forming
chains of such bonds holding the molecules together. This is a
particular problem in the bottom left corner of the periodic table (Ba,
Sr, La), where the atomic "diameter" is large.
We can solve this problem in several ways. We can use highly
electronegative substituents like F or Cl to make strong bonds with
the active atom and surround it, preventing other atoms from
bonding. However these strong bonds will require lots of energy to
break, raising the deposition temperatures. The carbonyl moiety CO
is also used in this fashion. Alternately, we can use large ligands
with inert exteriors to physically surround the active atom and
prevent bonding: acetylacetonates are members of this class of
materials. |
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We can conclude that to form a volatile precursor molecule, we must
find substances that form molecules with modest surface area (to minimize
van der Waals forces), avoid hydrogen bonding between molecules, and avoid
the formation of covalent bonds in the liquid or solid state.
Entropy: Trouton's "Rule"
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Recall that the change in free energy which determines the vapor
pressure also has a contribution from the change in entropy. At
right we show a sample of entropies of vaporization for a variety of
substances which are reasonably volatile around room temperature. We
can summarize the data as a histogram:
We see that the majority of substances have an entropy of
vaporization of 70 to 90 J/mole degree. This empirical observation
is "Trouton's rule". It fails for very small, light
molecules (He and H) or for substances which have strong hydrogen
bonding in the liquid state (water). |
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The vapor pressure of a gas at its boiling point, 1 atmosphere,
is equal to it's "standard state". The
"concentration" is therefore 1, so the change in free
enthalpy G upon vaporization must equal 0: both the liquid and gas
are in their standard states. This means that the change in enthalpy
divided by the boiling temperature is equal to the change in
entropy, that is about 85 J/mole degree. Thus if we know the boiling
temperature we can come up with a rough estimate of the enthalpy of
vaporization as well. |
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If we know both the enthalpy and entropy of vaporization, we can
derive the vapor pressure at any temperature (rather approximately)
by using the Clausius-Clapeyron equation. In particular, we can use
the boiling point for To and get the vapor pressure in atmospheres. |
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Examples of Volatile Precursors
Let's examine some common precursors in light of the above discussion.
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Silicon |
The most common precursor for silicon and related compounds is
silane, SiH4. This is a small molecule, and should have little van
der Waals attraction. It should have little dipole moment both
because the Si-H bond is not very polar, and because of the symmetry
of the molecule. There is nothing to hydrogen-bond to, and the
silicon covalent bonds are saturated. Thus it would be expected to
be highly volatile, and in fact silane is a gas at room temperature
even under pressure (boiling point -112 C).
Disilane, Si2H6, is a larger molecule and thus less volatile; its
boiling point is -14 C, so it can be liquified under pressure at
room temperature.
Another common precursor molecule is dichlorosilane, SiH2Cl2. The
larger chlorine atoms have higher electron density than hydrogen,
making this molecule less volatile, with a boiling temperature of 8
C. |
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SiO2 |
In addition to the various silanes above, we can use precursor
molecules in which oxygen-silicon bonds already exist, such as TEOS,
Si(OC2H5)4. This material has a larger surface area due to the four
ethyl (C2H5) groups on the outside; the vapor pressure of TEOS is
only around 5 Torr at room temperature, with a boiling point of
about 160 C. |
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Tungsten |
The most common precursor for deposition of tungsten is tunsten
hexafluoride, WF6. Here the tungsten is surrounded by six strongly
electronegative F atoms. The outer electron configuration of the W
atom has 4 d electrons and 2 s electrons, so all six electrons are
used up in the bonds. The boiling point of WF6 is about 17 C: it is
a highly volatile liquid at room temperature.
Note that the vapor pressure of WF6 is comparable to that of
dichlorosilane, even though the molecular weight is much larger: 298
vs. 101. It is not the mass of the molecule but the intermolecular
forces that primarily determine volatility. |
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